Gate-tunable phosphorene-topological insulator based spin transistor
- Published
- Publisher
- China Engineering Science Press Co. Ltd.
- Journal / collection
- Frontiers of Physics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.15302/frontphys.2026.125201
The original publisher provides the full text and its access options.
Cite this source
China Engineering Science Press Co. Ltd.. Gate-tunable phosphorene-topological insulator based spin transistor. Frontiers of Physics. 2026. https://doi.org/10.15302/frontphys.2026.125201