Lattice Heat Flow Thermal Modeling of Recessed Bridge-Gate InAlGaN/GaN High-Electron-Mobility Transistor
Tanjim Rahman; Trupti Ranjan Lenka; Mano Bala Sankar Muthu; Injamamul Hoque Emu; Uriel Ramirez; Hieu Pham Trung Nguyen
- Published
- Publisher
- Springer Science and Business Media LLC
- Research area
- Semiconductors
- Source type
- Preprint / posted paper
- DOI
- 10.21203/rs.3.rs-6532274/v1
This is a preprint or other posted paper. Check the original source for its review and publication status.
The original publisher provides the full text and its access options.
Cite this source
Tanjim Rahman; Trupti Ranjan Lenka; Mano Bala Sankar Muthu; Injamamul Hoque Emu; Uriel Ramirez; Hieu Pham Trung Nguyen. Lattice Heat Flow Thermal Modeling of Recessed Bridge-Gate InAlGaN/GaN High-Electron-Mobility Transistor. Springer Science and Business Media LLC. 2025-04-30. https://doi.org/10.21203/rs.3.rs-6532274/v1