P‐1.25: Non‐Volatile Charge Trap Memory Transistor Employing Indium Tungsten Oxide Thin Film as Active Channel and Charge Trap Layer
RuiPeng Shen; Zihan Wang; Haojun Chen; Yan Yan; Meng Zhang
- Published
- Publisher
- Wiley
- Journal / collection
- SID Symposium Digest of Technical Papers
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/sdtp.18930
The original publisher provides the full text and its access options.
Cite this source
RuiPeng Shen; Zihan Wang; Haojun Chen; Yan Yan; Meng Zhang. P‐1.25: Non‐Volatile Charge Trap Memory Transistor Employing Indium Tungsten Oxide Thin Film as Active Channel and Charge Trap Layer. SID Symposium Digest of Technical Papers. 2025-06. https://doi.org/10.1002/sdtp.18930