Anti‐Ambipolar Transistor Based on Van Der Waals Heterostructure Enables Gate‐Programmable Rectification
Jiao Qi; Hong Zhou; Xuanbo Zhao; Weiqi Shi; Weibo Duan; Zhiping Zhang; Xiangchao Zhang; Yuxiang Zheng; Rongjun Zhang
- Published
- Publisher
- Wiley
- Journal / collection
- Advanced Functional Materials
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/adfm.77475
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Cite this source
Jiao Qi; Hong Zhou; Xuanbo Zhao; Weiqi Shi; Weibo Duan; Zhiping Zhang; Xiangchao Zhang; Yuxiang Zheng; Rongjun Zhang. Anti‐Ambipolar Transistor Based on Van Der Waals Heterostructure Enables Gate‐Programmable Rectification. Advanced Functional Materials. 2026-07-31. https://doi.org/10.1002/adfm.77475