Radiation Evaluation of the TPS7H502X-SP Radiation-Hardness-Assured (RHA) Single-Ended PWM Controller with Integrated Silicon (Si) and Gallium Nitride (GaN) Field Effect Transistor (FET) Gate Driver
T. Lew; E. Johnson; A. Marinelarena
- Published
- Publisher
- IEEE
- Journal / collection
- 2025 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2025 NSREC)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/redw68988.2025.11534024
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Cite this source
T. Lew; E. Johnson; A. Marinelarena. Radiation Evaluation of the TPS7H502X-SP Radiation-Hardness-Assured (RHA) Single-Ended PWM Controller with Integrated Silicon (Si) and Gallium Nitride (GaN) Field Effect Transistor (FET) Gate Driver. 2025 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2025 NSREC). 2025-07-14. https://doi.org/10.1109/redw68988.2025.11534024