Spacer Engineered Asymmetrical Dual Gate Tunnel Field Effect Transistor with Stacked Dielectric Materials for Low Power Applications
- Published
- Publisher
- International Digital Organization for Scientific Information (IDOSI)
- Journal / collection
- International Journal of Engineering
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.5829/ije.2025.38.06c.02
The original publisher provides the full text and its access options.
Cite this source
International Digital Organization for Scientific Information (IDOSI). Spacer Engineered Asymmetrical Dual Gate Tunnel Field Effect Transistor with Stacked Dielectric Materials for Low Power Applications. International Journal of Engineering. 2025-06. https://doi.org/10.5829/ije.2025.38.06c.02