Ultra-low power 6T, 5T, 4T and 3T static random‑access memory cells and arrays using carbon nanotube field effect transistor
Syed Saleem; P. Venkatramana
- Published
- Publisher
- Informa UK Limited
- Journal / collection
- International Journal of Electronics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1080/00207217.2026.2711142
The original publisher provides the full text and its access options.
Cite this source
Syed Saleem; P. Venkatramana. Ultra-low power 6T, 5T, 4T and 3T static random‑access memory cells and arrays using carbon nanotube field effect transistor. International Journal of Electronics. 2026-08-05. https://doi.org/10.1080/00207217.2026.2711142