One Transistor Type OFET/ReRAM Integrated Device Utilizing High-k LaB x N y /Nitrogen-Doped LaB 6 Gate Electrode Stacked Structure
Shun-ichiro OHMI; Jiaang ZHAO
- Published
- Publisher
- Institute of Electronics, Information and Communications Engineers (IEICE)
- Journal / collection
- IEICE Transactions on Electronics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1587/transele.2024fup0002
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Cite this source
Shun-ichiro OHMI; Jiaang ZHAO. One Transistor Type OFET/ReRAM Integrated Device Utilizing High-k LaB x N y /Nitrogen-Doped LaB 6 Gate Electrode Stacked Structure. IEICE Transactions on Electronics. 2025-09-01. https://doi.org/10.1587/transele.2024fup0002