A GaN-based multi-threshold two-finger high electron mobility transistor with reduced third-order nonlinearity by nullification
Mahalaxmi Patil; Aaqib H. Sheikh; Nashra Khalid; Anurag P. Chilwirwar; B. Parvez; S. Ganguly; D. Saha
- Published
- Publisher
- AIP Publishing
- Journal / collection
- APL Electronic Devices
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1063/5.0265870
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Cite this source
Mahalaxmi Patil; Aaqib H. Sheikh; Nashra Khalid; Anurag P. Chilwirwar; B. Parvez; S. Ganguly; D. Saha. A GaN-based multi-threshold two-finger high electron mobility transistor with reduced third-order nonlinearity by nullification. APL Electronic Devices. 2025-06-01. https://doi.org/10.1063/5.0265870