Barrier–channel intermixing and 2-dimensional electron gas degradation in Al-rich Al(Ga)N/AlGaN high electron mobility transistor heterostructures
P. Pampili; V. Z. Zubialevich; B. Mondal; J. Mukherjee; S. Schulz; D. A. J. Moran; P. J. Parbrook
- Published
- Publisher
- AIP Publishing
- Journal / collection
- Applied Physics Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1063/5.0325471
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Cite this source
P. Pampili; V. Z. Zubialevich; B. Mondal; J. Mukherjee; S. Schulz; D. A. J. Moran; P. J. Parbrook. Barrier–channel intermixing and 2-dimensional electron gas degradation in Al-rich Al(Ga)N/AlGaN high electron mobility transistor heterostructures. Applied Physics Letters. 2026-06-29. https://doi.org/10.1063/5.0325471