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Research literature / Conference paper

A Scalable Residual-Attention Model for Predicting DC and RF Characteristics of SiGe Heterojunction Bipolar Transistor

Venukumari Parella; Jagadeesh Thati; Suresh Balanethiram

Published
Publisher
IEEE
Journal / collection
2026 Fifth International Conference on Power, Control and Computing Technologies (ICPC2T)
Research area
Semiconductors
Source type
Conference paper
DOI
10.1109/icpc2t68221.2026.11646363

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Venukumari Parella; Jagadeesh Thati; Suresh Balanethiram. A Scalable Residual-Attention Model for Predicting DC and RF Characteristics of SiGe Heterojunction Bipolar Transistor. 2026 Fifth International Conference on Power, Control and Computing Technologies (ICPC2T). 2026-03. https://doi.org/10.1109/icpc2t68221.2026.11646363

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