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Research literature / Preprint / posted paper

High Mobility Ge/SiGe 2DHG Heterostructure Quantum Wells for Semiconductor Hole Spin Qubits

Zhenzhen Kong; Guilei Wang

Published
Publisher
Elsevier BV
Research area
Semiconductors
Source type
Preprint / posted paper
DOI
10.2139/ssrn.6880911

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Zhenzhen Kong; Guilei Wang. High Mobility Ge/SiGe 2DHG Heterostructure Quantum Wells for Semiconductor Hole Spin Qubits. Elsevier BV. 2026. https://doi.org/10.2139/ssrn.6880911

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