Evaluation of contact properties of AlGaN/GaN high-electron-mobility transistor using the bridge-contact resistance method
Hyunjung Lee; Haechan Lee; Seunggyu Hwang; Donghan Kim; Jiyeong Yun; Bogeun Son; Jeong-Gil Kim; Hongsik Park
- Published
- Publisher
- AIP Publishing
- Journal / collection
- AIP Advances
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1063/5.0318919
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Cite this source
Hyunjung Lee; Haechan Lee; Seunggyu Hwang; Donghan Kim; Jiyeong Yun; Bogeun Son; Jeong-Gil Kim; Hongsik Park. Evaluation of contact properties of AlGaN/GaN high-electron-mobility transistor using the bridge-contact resistance method. AIP Advances. 2026-02-01. https://doi.org/10.1063/5.0318919