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Research literature / Conference paper

A Gate-All-Around Nanosheet Oxide Semiconductor Transistor by Selective Crystallization of InGaOx for Performance and Reliability Enhancement

Anlan Chen; Ki-woong Park; Kota Sakai; Sunbin Hwang; Xingyu Huang; Takuya Saraya; Toshiro Hiramoto; Takanori Takahashi; Mutsunori Uenuma; Yukiharu Uraoka; Masaharu Kobayashi

Published
Publisher
IEEE
Journal / collection
2025 Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
Research area
Semiconductors
Source type
Conference paper
DOI
10.23919/vlsitechnologyandcir65189.2025.11074932

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Anlan Chen; Ki-woong Park; Kota Sakai; Sunbin Hwang; Xingyu Huang; Takuya Saraya; Toshiro Hiramoto; Takanori Takahashi; Mutsunori Uenuma; Yukiharu Uraoka; Masaharu Kobayashi. A Gate-All-Around Nanosheet Oxide Semiconductor Transistor by Selective Crystallization of InGaOx for Performance and Reliability Enhancement. 2025 Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits). 2025-06-08. https://doi.org/10.23919/vlsitechnologyandcir65189.2025.11074932

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