The Threshold Voltage Characteristic of β-Ga 2 O 3 -Based Enhancement Mode Heterojunction Gate Field Effect Transistor
Yunlong He; Yu Shao; Xiaoli Lu; Xichen Wang; Peng Liu; Guran Chen; Weiwei Chen; Lei Wang; Jun Yang; Yuan Li; Xuefeng Zheng; Xiaohua Ma; Yue Hao
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Electron Devices
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/ted.2025.3625923
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Cite this source
Yunlong He; Yu Shao; Xiaoli Lu; Xichen Wang; Peng Liu; Guran Chen; Weiwei Chen; Lei Wang; Jun Yang; Yuan Li; Xuefeng Zheng; Xiaohua Ma; Yue Hao. The Threshold Voltage Characteristic of β-Ga 2 O 3 -Based Enhancement Mode Heterojunction Gate Field Effect Transistor. IEEE Transactions on Electron Devices. 2025-12. https://doi.org/10.1109/ted.2025.3625923