Suppressing the Capacitive Coupling by Adjusting the Precharge Biasing Scheme in a Two-Transistor Dynamic Random-Access Memory Operation
Ju Hong Min; Jihun Kang; Jang Hyun Kim; Seongjae Cho
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Access
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/access.2026.3660349
The original publisher provides the full text and its access options.
Cite this source
Ju Hong Min; Jihun Kang; Jang Hyun Kim; Seongjae Cho. Suppressing the Capacitive Coupling by Adjusting the Precharge Biasing Scheme in a Two-Transistor Dynamic Random-Access Memory Operation. IEEE Access. 2026. https://doi.org/10.1109/access.2026.3660349