Oxide-semiconductor Channel Transistor DRAM (OCTRAM) for High-density and Low-power AI memory
Shoichi Kabuyanagi; Tseng Fu Lu; Shosuke Fujii; Szu Yao Chang; Shinji Miyano; Chung Peng Hao; Akihiro Kajita; Chung Lin Huang; Takeshi Fujimaki; Chiang-Lin Shih
- Published
- Publisher
- IEEE
- Journal / collection
- 2025 IEEE International Electron Devices Meeting (IEDM)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/iedm50572.2025.11353647
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Cite this source
Shoichi Kabuyanagi; Tseng Fu Lu; Shosuke Fujii; Szu Yao Chang; Shinji Miyano; Chung Peng Hao; Akihiro Kajita; Chung Lin Huang; Takeshi Fujimaki; Chiang-Lin Shih. Oxide-semiconductor Channel Transistor DRAM (OCTRAM) for High-density and Low-power AI memory. 2025 IEEE International Electron Devices Meeting (IEDM). 2025-12-06. https://doi.org/10.1109/iedm50572.2025.11353647