Simulation Study on 6.5 kV SiC Trench Gate p-Channel Superjunction Insulated Gate Bipolar Transistor
Kuan-Min Kang; Jia-Wei Hu; Chih-Fang Huang
- Published
- Publisher
- MDPI AG
- Journal / collection
- Micromachines
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.3390/mi16070758
The original publisher provides the full text and its access options.
Cite this source
Kuan-Min Kang; Jia-Wei Hu; Chih-Fang Huang. Simulation Study on 6.5 kV SiC Trench Gate p-Channel Superjunction Insulated Gate Bipolar Transistor. Micromachines. 2025-06-27. https://doi.org/10.3390/mi16070758