A resistive switching-based dual grid nanoscale vacuum channel transistor working as a material implication logic gate
Yan Zhang; Gengmin Zhang; Xianlong Wei; Wensheng Zhou
- Published
- Publisher
- IOP Publishing
- Journal / collection
- Journal of Physics D: Applied Physics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1088/1361-6463/ae7a84
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Cite this source
Yan Zhang; Gengmin Zhang; Xianlong Wei; Wensheng Zhou. A resistive switching-based dual grid nanoscale vacuum channel transistor working as a material implication logic gate. Journal of Physics D: Applied Physics. 2026-06-22. https://doi.org/10.1088/1361-6463/ae7a84