Gate-driven band modulation hyperdoping for high-performance p-type 2D semiconductor transistors
Bei Zhao; Zucheng Zhang; Junqing Xu; Dingli Guo; Tiancheng Gu; Guiming He; Ping Lu; Kun He; Jia Li; Zhao Chen; Quan Ren; Lin Miao; Junpeng Lu; Zhenhua Ni; Xiangfeng Duan; Xidong Duan
- Published
- Publisher
- American Association for the Advancement of Science (AAAS)
- Journal / collection
- Science
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1126/science.adp8444
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Cite this source
Bei Zhao; Zucheng Zhang; Junqing Xu; Dingli Guo; Tiancheng Gu; Guiming He; Ping Lu; Kun He; Jia Li; Zhao Chen; Quan Ren; Lin Miao; Junpeng Lu; Zhenhua Ni; Xiangfeng Duan; Xidong Duan. Gate-driven band modulation hyperdoping for high-performance p-type 2D semiconductor transistors. Science. 2025-06-12. https://doi.org/10.1126/science.adp8444