A novel normally-off stepped multi-channel AlGaN/AlN/GaN HEMT transistor with excellent DC characteristics
Amir khaleghparast Sereshkeh; Meysam Zareiee
- Published
- Publisher
- Springer Science and Business Media LLC
- Journal / collection
- Journal of Computational Electronics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1007/s10825-026-02628-y
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Cite this source
Amir khaleghparast Sereshkeh; Meysam Zareiee. A novel normally-off stepped multi-channel AlGaN/AlN/GaN HEMT transistor with excellent DC characteristics. Journal of Computational Electronics. 2026-09-16. https://doi.org/10.1007/s10825-026-02628-y