Innovative DRAM Cell Featuring a Vertical Junctionless Pillar Access Transistor With a High Work-Function Molybdenum Nitride Metal Gate for Enhanced Performance and Efficiency
Deyuan Xiao; Yi Jiang; Yunsong Qiu; Yuhong Zheng; Daohuan Feng; Chen Yang; Minrui Hu; Guoming Huang; Qinghua Han; Xiang Liu; Kai Shao; Jianfeng Xiao; Jian Chu; Di Ma; Dongsheng Xie; Jinying Liu; Tingting Gu; Xian Zou; Xu Peng; Meng Hao
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Electron Devices
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/ted.2025.3638315
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Deyuan Xiao; Yi Jiang; Yunsong Qiu; Yuhong Zheng; Daohuan Feng; Chen Yang; Minrui Hu; Guoming Huang; Qinghua Han; Xiang Liu; Kai Shao; Jianfeng Xiao; Jian Chu; Di Ma; Dongsheng Xie; Jinying Liu; Tingting Gu; Xian Zou; Xu Peng; Meng Hao. Innovative DRAM Cell Featuring a Vertical Junctionless Pillar Access Transistor With a High Work-Function Molybdenum Nitride Metal Gate for Enhanced Performance and Efficiency. IEEE Transactions on Electron Devices. 2026-02. https://doi.org/10.1109/ted.2025.3638315