Skip to content
Independent research & intelligence
OPEN VARIABLE

Evidence-First Signal Intelligence

Menu

Research literature / Journal article

Defect-Modulated In 2 S 3-3 x O 3 x Thin-Film Transistor for Enhanced NO 2 Sensing

C. Liang; J. Hao; Y. Zhou; P. He; R. Yang; Y. Guo; W. Hu; Y. He

Published
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Journal / collection
IEEE Sensors Journal
Research area
Semiconductors
Source type
Journal article
DOI
10.1109/jsen.2025.3646552

Read the original source ↗

The original publisher provides the full text and its access options.

Cite this source

C. Liang; J. Hao; Y. Zhou; P. He; R. Yang; Y. Guo; W. Hu; Y. He. Defect-Modulated In 2 S 3-3 x O 3 x Thin-Film Transistor for Enhanced NO 2 Sensing. IEEE Sensors Journal. 2026-02-15. https://doi.org/10.1109/jsen.2025.3646552

Download RIS