Unveiling strain in future generation transistor technology by Bessel beam electron diffraction method
P. Favia; G. Eneman; A. Veloso; A. Nalin Mehta; G.T. Martinez; O. Richard; A. Hikavyy; P.P. Gowda; F. Seidel; G. Pourtois; A. De Keersgieter; E. Grieten
- Published
- Publisher
- Elsevier BV
- Journal / collection
- Microelectronic Engineering
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1016/j.mee.2025.112334
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Cite this source
P. Favia; G. Eneman; A. Veloso; A. Nalin Mehta; G.T. Martinez; O. Richard; A. Hikavyy; P.P. Gowda; F. Seidel; G. Pourtois; A. De Keersgieter; E. Grieten. Unveiling strain in future generation transistor technology by Bessel beam electron diffraction method. Microelectronic Engineering. 2025-09. https://doi.org/10.1016/j.mee.2025.112334