Very High-Power RF Transistors and Transistor Amplifiers
John Walker; Gabriele Formicone; James Custer
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Microwave Magazine
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/mmm.2025.3585400
The original publisher provides the full text and its access options.
Cite this source
John Walker; Gabriele Formicone; James Custer. Very High-Power RF Transistors and Transistor Amplifiers. IEEE Microwave Magazine. 2026-04. https://doi.org/10.1109/mmm.2025.3585400