Work function optimization of dual metal buried channel array transistor dynamic random-access memory for simultaneous mitigation of gate-induced drain leakage, gate-induced junction leakage, pass gate effect, and 1‑row disturb
Hwichan Jeon; Min-Woo Kwon
- Published
- Publisher
- IOP Publishing
- Journal / collection
- Japanese Journal of Applied Physics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.35848/1347-4065/ae5199
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Cite this source
Hwichan Jeon; Min-Woo Kwon. Work function optimization of dual metal buried channel array transistor dynamic random-access memory for simultaneous mitigation of gate-induced drain leakage, gate-induced junction leakage, pass gate effect, and 1‑row disturb. Japanese Journal of Applied Physics. 2026-04-06. https://doi.org/10.35848/1347-4065/ae5199