Vertical 2T-nC FeRAM Demonstration: BEOL Read Transistor for 4F 2 Memory Strings and Two-Terminal Selector Design for Polarization Disturb Mitigation
Shan Deng; John Howe; Sizhe Ma; Sadik Yasir Tauki; Zijian Zhao; Jiahui Duan; YuShan Lee; Yixin Qin; Rajiv Joshi; Thomas Kampfe; Xiao Gong; Vijaykrishnan Narayanan; Kai Ni
- Published
- Publisher
- IEEE
- Journal / collection
- 2025 Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.23919/vlsitechnologyandcir65189.2025.11074964
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Shan Deng; John Howe; Sizhe Ma; Sadik Yasir Tauki; Zijian Zhao; Jiahui Duan; YuShan Lee; Yixin Qin; Rajiv Joshi; Thomas Kampfe; Xiao Gong; Vijaykrishnan Narayanan; Kai Ni. Vertical 2T-nC FeRAM Demonstration: BEOL Read Transistor for 4F 2 Memory Strings and Two-Terminal Selector Design for Polarization Disturb Mitigation. 2025 Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits). 2025-06-08. https://doi.org/10.23919/vlsitechnologyandcir65189.2025.11074964