Multi-bit nonvolatile memory device based on the reverse polarization under the channel of organic ferroelectric thin-film transistor
Qiusong Chen; Yulan Zhou; Juan E. Sanchez; Dong Lin; Guodong Zhu; Zuhong Xiong
- Published
- Publisher
- Elsevier BV
- Journal / collection
- Surface and Coatings Technology
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1016/j.surfcoat.2025.132180
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Cite this source
Qiusong Chen; Yulan Zhou; Juan E. Sanchez; Dong Lin; Guodong Zhu; Zuhong Xiong. Multi-bit nonvolatile memory device based on the reverse polarization under the channel of organic ferroelectric thin-film transistor. Surface and Coatings Technology. 2025-08. https://doi.org/10.1016/j.surfcoat.2025.132180