Remarkably High Effective Mobility of 301 cm2/V·s in 3 nm Ultra-Thin-Body SnO2 Transistor by UV Annealing
An-Chieh Shih; Yi-Hao Zhan; Albert Chin
- Published
- Publisher
- MDPI AG
- Journal / collection
- Nanomaterials
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.3390/nano16020133
The original publisher provides the full text and its access options.
Cite this source
An-Chieh Shih; Yi-Hao Zhan; Albert Chin. Remarkably High Effective Mobility of 301 cm2/V·s in 3 nm Ultra-Thin-Body SnO2 Transistor by UV Annealing. Nanomaterials. 2026-01-19. https://doi.org/10.3390/nano16020133