3D DRAM with stacked oxide-semiconductor channel transistors
Taeyoung Song; Asif Islam Khan
- Published
- Publisher
- Springer Science and Business Media LLC
- Journal / collection
- Nature Electronics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1038/s41928-025-01521-z
The original publisher provides the full text and its access options.
Cite this source
Taeyoung Song; Asif Islam Khan. 3D DRAM with stacked oxide-semiconductor channel transistors. Nature Electronics. 2025-12-05. https://doi.org/10.1038/s41928-025-01521-z