Skip to content
Independent research & intelligence
OPEN VARIABLE

Evidence-First Signal Intelligence

Menu

Research literature / Journal article

Polycrystalline InGaO Thin-Film Transistor with SiO 2 Gate Insulator for High-Performance Artificial Synapses

Taebin Lim; Solbee Lee; Heerak Wi; Joon Young Kwak; Jin Jang

Published
Publisher
American Chemical Society (ACS)
Journal / collection
ACS Applied Materials & Interfaces
Research area
Semiconductors
Source type
Journal article
DOI
10.1021/acsami.5c20927

Read the original source ↗

The original publisher provides the full text and its access options.

Cite this source

Taebin Lim; Solbee Lee; Heerak Wi; Joon Young Kwak; Jin Jang. Polycrystalline InGaO Thin-Film Transistor with SiO 2 Gate Insulator for High-Performance Artificial Synapses. ACS Applied Materials & Interfaces. 2026-01-05. https://doi.org/10.1021/acsami.5c20927

Download RIS