Optimization of High‐κ HfO 2 Transistor Dielectrics by Atomic Layer Deposition as an Enabler of Novel Thin‐Film Circuits and Sensors
Matin Forouzmehr; Hamed Pourkheirollah; Fabio Leite; Elin Howard; Sunil Kumar Behera; Amit Tewari; Jarmo Laakso; Kimmo Lahtonen; Cesar A. T. Laia; A. Jorge Parola; Phillipe Marrec; Donald Lupo; Paul. R. Berger
- Published
- Publisher
- Wiley
- Journal / collection
- Advanced Physics Research
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/apxr.202500191
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Cite this source
Matin Forouzmehr; Hamed Pourkheirollah; Fabio Leite; Elin Howard; Sunil Kumar Behera; Amit Tewari; Jarmo Laakso; Kimmo Lahtonen; Cesar A. T. Laia; A. Jorge Parola; Phillipe Marrec; Donald Lupo; Paul. R. Berger. Optimization of High‐κ HfO 2 Transistor Dielectrics by Atomic Layer Deposition as an Enabler of Novel Thin‐Film Circuits and Sensors. Advanced Physics Research. 2025-12. https://doi.org/10.1002/apxr.202500191