Material and electrical characterization of ultrawide bandgap BN/AlN metal-insulator-semiconductor (MIS) Schottky diodes
Dinusha Herath Mudiyanselage; Ali Ebadi Yekta; Ramandeep Mandia; Bingcheng Da; Dawei Wang; Ziyi He; Junzhe Xie; David J. Smith; Robert J. Nemanich; Houqiang Fu
- Published
- Publisher
- American Vacuum Society
- Journal / collection
- Journal of Vacuum Science & Technology A
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1116/6.0004820
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Dinusha Herath Mudiyanselage; Ali Ebadi Yekta; Ramandeep Mandia; Bingcheng Da; Dawei Wang; Ziyi He; Junzhe Xie; David J. Smith; Robert J. Nemanich; Houqiang Fu. Material and electrical characterization of ultrawide bandgap BN/AlN metal-insulator-semiconductor (MIS) Schottky diodes. Journal of Vacuum Science & Technology A. 2025-11-19. https://doi.org/10.1116/6.0004820