Highly Responsive Near-Infrared Photodetector Based on Contactless PdSe 2 Integration with a Few-Layered MoSe 2 Field-Effect Transistor
Roshan Padhan; Akshay Wali; Nivetha Murugesan; Ralu Divan; Anirudha V. Sumant; Daniel Rosenmann; Rohit R. Srivastava; Shan Yang; Nihar R. Pradhan
- Published
- Publisher
- American Chemical Society (ACS)
- Journal / collection
- ACS Applied Electronic Materials
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1021/acsaelm.6c00228
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Cite this source
Roshan Padhan; Akshay Wali; Nivetha Murugesan; Ralu Divan; Anirudha V. Sumant; Daniel Rosenmann; Rohit R. Srivastava; Shan Yang; Nihar R. Pradhan. Highly Responsive Near-Infrared Photodetector Based on Contactless PdSe 2 Integration with a Few-Layered MoSe 2 Field-Effect Transistor. ACS Applied Electronic Materials. 2026-04-30. https://doi.org/10.1021/acsaelm.6c00228