Skip to content
Independent research & intelligence
OPEN VARIABLE

Evidence-First Signal Intelligence

Menu

Research literature / Journal article

Demonstration of One Transistor-One Diode (1T1D) p-GaN/AlGaN/GaN Memory Cell

Youyi Yin; Teng Li; Junjie Yang; Jingjing Yu; Yunhong Lao; Hao Chang; Jialin Duan; Xiaosen Liu; Maojun Wang; Kechao Tang; Yimao Cai; Bo Shen; Jin Wei

Published
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Journal / collection
IEEE Electron Device Letters
Research area
Semiconductors
Source type
Journal article
DOI
10.1109/led.2025.3581752

Read the original source ↗

The original publisher provides the full text and its access options.

Cite this source

Youyi Yin; Teng Li; Junjie Yang; Jingjing Yu; Yunhong Lao; Hao Chang; Jialin Duan; Xiaosen Liu; Maojun Wang; Kechao Tang; Yimao Cai; Bo Shen; Jin Wei. Demonstration of One Transistor-One Diode (1T1D) p-GaN/AlGaN/GaN Memory Cell. IEEE Electron Device Letters. 2025-08. https://doi.org/10.1109/led.2025.3581752

Download RIS