Effects of trimethylaluminum treatment on the interface properties of HfO2/Si0.7Ge0.3 metal oxide semiconductor capacitors
Yu Zhou; Xiaotong Mao; Kaimin Feng; Haoyan Liu; Jun Luo; Yongliang Li
- Published
- Publisher
- Springer Science and Business Media LLC
- Journal / collection
- Journal of Materials Science: Materials in Electronics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1007/s10854-025-16107-w
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Cite this source
Yu Zhou; Xiaotong Mao; Kaimin Feng; Haoyan Liu; Jun Luo; Yongliang Li. Effects of trimethylaluminum treatment on the interface properties of HfO2/Si0.7Ge0.3 metal oxide semiconductor capacitors. Journal of Materials Science: Materials in Electronics. 2025-11. https://doi.org/10.1007/s10854-025-16107-w