Optimization is Key to High-Temperature Reliability in Oxide-Semiconductor FETs
Jack C. Evans; Fabia F. Athena; Koustav Jana; Balreen Saini; Shuhan Liu; Ethan Boneh; Paul C. McIntyre; H.-S. Philip Wong
- Published
- Publisher
- IEEE
- Journal / collection
- 2025 Device Research Conference (DRC)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/drc66027.2025.11105716
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Cite this source
Jack C. Evans; Fabia F. Athena; Koustav Jana; Balreen Saini; Shuhan Liu; Ethan Boneh; Paul C. McIntyre; H.-S. Philip Wong. Optimization is Key to High-Temperature Reliability in Oxide-Semiconductor FETs. 2025 Device Research Conference (DRC). 2025-06-22. https://doi.org/10.1109/drc66027.2025.11105716