S-atom dislocation-induced room-temperature ferroelectricity in two-dimensional α-MnS semiconductor
Ling Huang; Jialiang Wu; Chen-Min Dai; Ruofan Du; Junbo Yang; Yanan Peng; Xiaohui Li; Hang Sun; Luying Song; Yinuo Li; Ruihan Xu; Chuxuan Xiao; Yulin Jiang; Zhu Du; Yuhang Li; Yao Wen; Jianping Shi; Jun He
- Published
- Publisher
- Springer Science and Business Media LLC
- Journal / collection
- Nature Communications
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1038/s41467-026-71802-4
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Cite this source
Ling Huang; Jialiang Wu; Chen-Min Dai; Ruofan Du; Junbo Yang; Yanan Peng; Xiaohui Li; Hang Sun; Luying Song; Yinuo Li; Ruihan Xu; Chuxuan Xiao; Yulin Jiang; Zhu Du; Yuhang Li; Yao Wen; Jianping Shi; Jun He. S-atom dislocation-induced room-temperature ferroelectricity in two-dimensional α-MnS semiconductor. Nature Communications. 2026-04-22. https://doi.org/10.1038/s41467-026-71802-4