Efficient and Robust p-Type Transistor Based on Ultrawide-Bandgap Semiconductor
Kaijian Xing; Zherui Yang; Weiyao Zhao; Yuefeng Yin; Huiping Han; Shanhu Wang; Shifan Wang; James Bullock; Alastair Stacey; James A. Belcourt; Sergey Rubanov; Hang Yin; David A. Broadway; Jean-Philippe Tetienne; Xinmao Yin; Liang Wu; Dong-Chen Qi; Michael S. Fuhrer; Qingdong Ou; Xiao Renshaw Wang
- Published
- Publisher
- American Chemical Society (ACS)
- Journal / collection
- ACS Nano
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1021/acsnano.5c22605
The original publisher provides the full text and its access options.
Cite this source
Kaijian Xing; Zherui Yang; Weiyao Zhao; Yuefeng Yin; Huiping Han; Shanhu Wang; Shifan Wang; James Bullock; Alastair Stacey; James A. Belcourt; Sergey Rubanov; Hang Yin; David A. Broadway; Jean-Philippe Tetienne; Xinmao Yin; Liang Wu; Dong-Chen Qi; Michael S. Fuhrer; Qingdong Ou; Xiao Renshaw Wang. Efficient and Robust p-Type Transistor Based on Ultrawide-Bandgap Semiconductor. ACS Nano. 2026-02-17. https://doi.org/10.1021/acsnano.5c22605