Fabrication of a p-Si/MoS 2 /WSe 2 bipolar junction transistor via a CVD-grown MoS 2 on p-type silicon
Fu-Sung Hsu; Pao-Hung Lin; Huan-Chun Wang; Ruei-San Chen; Ching-Hwa Ho; Kuei-Yi Lee
- Published
- Publisher
- IOP Publishing
- Journal / collection
- Japanese Journal of Applied Physics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.35848/1347-4065/ae42a9
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Cite this source
Fu-Sung Hsu; Pao-Hung Lin; Huan-Chun Wang; Ruei-San Chen; Ching-Hwa Ho; Kuei-Yi Lee. Fabrication of a p-Si/MoS 2 /WSe 2 bipolar junction transistor via a CVD-grown MoS 2 on p-type silicon. Japanese Journal of Applied Physics. 2026-02-24. https://doi.org/10.35848/1347-4065/ae42a9