Temperature and Interface Trap Effects on Carrier Mobility in Hydrogen-Terminated Metal–Oxide Semiconductor Field-Effect Transistor (HD-MOSFET) Using Sentaurus
Nuwayyir Alshammari; Mulpuri V Rao; Qiliang Li
- Published
- Publisher
- The Electrochemical Society
- Journal / collection
- ECS Meeting Abstracts
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1149/ma2025-02331670mtgabs
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Cite this source
Nuwayyir Alshammari; Mulpuri V Rao; Qiliang Li. Temperature and Interface Trap Effects on Carrier Mobility in Hydrogen-Terminated Metal–Oxide Semiconductor Field-Effect Transistor (HD-MOSFET) Using Sentaurus. ECS Meeting Abstracts. 2025-11-24. https://doi.org/10.1149/ma2025-02331670mtgabs