A Novel Power Device: 4H-SiC Junction Gate Bipolar Transistor (JGBT) With Excellent Static Performance
Yongliang Ni; Deshang Sha; Keling Song
- Published
- Publisher
- IEEE
- Journal / collection
- 2026 9th International Conference on Advanced Electronic Technology, Computers and Software Engineering (AETCSE)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/aetcse69203.2026.11504349
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Cite this source
Yongliang Ni; Deshang Sha; Keling Song. A Novel Power Device: 4H-SiC Junction Gate Bipolar Transistor (JGBT) With Excellent Static Performance. 2026 9th International Conference on Advanced Electronic Technology, Computers and Software Engineering (AETCSE). 2026-03-20. https://doi.org/10.1109/aetcse69203.2026.11504349