Simultaneously enhanced mobility and stability in In2O3 thin-film transistor by nitrogen modification
Wengao Pan; Kaijie Gu; Meijin Zhao; Lei Xu; Wenwu Pan; LiLi Xiao; Suyang Sun; Hailin Jing; Zhiyuan Zhu; Ying Li
- Published
- Publisher
- AIP Publishing
- Journal / collection
- Journal of Applied Physics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1063/5.0282143
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Cite this source
Wengao Pan; Kaijie Gu; Meijin Zhao; Lei Xu; Wenwu Pan; LiLi Xiao; Suyang Sun; Hailin Jing; Zhiyuan Zhu; Ying Li. Simultaneously enhanced mobility and stability in In2O3 thin-film transistor by nitrogen modification. Journal of Applied Physics. 2025-08-05. https://doi.org/10.1063/5.0282143