Enhanced Performance Source Pocket Based Dual Metal Double Gate GaSb /Si Heterojunction Vertical Tunnel Field Effect Transistor (V‐ TFET ) for Low Power VLSI Applications
Sourav Das; Kunal Singh
- Published
- Publisher
- Wiley
- Journal / collection
- International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/jnm.70093
The original publisher provides the full text and its access options.
Cite this source
Sourav Das; Kunal Singh. Enhanced Performance Source Pocket Based Dual Metal Double Gate GaSb /Si Heterojunction Vertical Tunnel Field Effect Transistor (V‐ TFET ) for Low Power VLSI Applications. International Journal of Numerical Modelling: Electronic Networks, Devices and Fields. 2025-07. https://doi.org/10.1002/jnm.70093