Investigation of Deep States in GaN Metal-Oxide-Semiconductor Interfaces
Yoshihiro Irokawa; Mamoru Usami; Jun Uzuhashi; Tadakatsu Ohkubo; Toshihide Nabatame; Yasuo Koide
- Published
- Publisher
- The Electrochemical Society
- Journal / collection
- ECS Journal of Solid State Science and Technology
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1149/2162-8777/ae6689
The original publisher provides the full text and its access options.
Cite this source
Yoshihiro Irokawa; Mamoru Usami; Jun Uzuhashi; Tadakatsu Ohkubo; Toshihide Nabatame; Yasuo Koide. Investigation of Deep States in GaN Metal-Oxide-Semiconductor Interfaces. ECS Journal of Solid State Science and Technology. 2026-05-01. https://doi.org/10.1149/2162-8777/ae6689