Heterogeneous Capacitor‐less Two‐transistor Dynamic Random Access Memory Cell with Long Retention Time and High Sensing Current Supporting 5‐Bit Multilevel Operation
Yonghee Lee; Seung‐Yoon Lee; Jinheon Choi; Néstor Ghenzi; Joon‐Kyu Han; Cheol Seong Hwang
- Published
- Publisher
- Wiley
- Journal / collection
- physica status solidi (RRL) – Rapid Research Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/pssr.202500131
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Cite this source
Yonghee Lee; Seung‐Yoon Lee; Jinheon Choi; Néstor Ghenzi; Joon‐Kyu Han; Cheol Seong Hwang. Heterogeneous Capacitor‐less Two‐transistor Dynamic Random Access Memory Cell with Long Retention Time and High Sensing Current Supporting 5‐Bit Multilevel Operation. physica status solidi (RRL) – Rapid Research Letters. 2025-05-25. https://doi.org/10.1002/pssr.202500131