Direct analysis of RTA impact on S/D epi and channel resistance versus contact resistivity in n- and p-NSFET with cascaded transistor methodology
Pierre Eyben; Erik Rosseel; Camila Toledo de Carvalho Cavalcante; Thomas Chiarella; Thomas Dursap; Ritam Sarkar; Hans Mertens; Daniel Casey; Jérome Mitard; Clément Porret; Rami Khazaka; Naoto Horiguchi
- Published
- Publisher
- IEEE
- Journal / collection
- 2025 IEEE 7th International Conference on Emerging Electronics (ICEE)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/icee67165.2025.11409742
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Cite this source
Pierre Eyben; Erik Rosseel; Camila Toledo de Carvalho Cavalcante; Thomas Chiarella; Thomas Dursap; Ritam Sarkar; Hans Mertens; Daniel Casey; Jérome Mitard; Clément Porret; Rami Khazaka; Naoto Horiguchi. Direct analysis of RTA impact on S/D epi and channel resistance versus contact resistivity in n- and p-NSFET with cascaded transistor methodology. 2025 IEEE 7th International Conference on Emerging Electronics (ICEE). 2025-12-13. https://doi.org/10.1109/icee67165.2025.11409742