Quantitative Analysis on the Interaction Between Channel Carrier and Remote Trap in Hf x Zr 1‐x O 2 /SiO 2 Interface in Ferroelectric Field‐Effect‐Transistor
Haneul Lee; Sujong Kim; Changhyeon Han; Haesung Kim; Hyojin Yang; Sejun Park; Sanghyuk Yun; Yoon Jung Lee; Sung‐Jin Choi; Dae Hwan Kim; Dong Myong Kim; Daewoong Kwon; Jong‐Ho Bae
- Published
- Publisher
- Wiley
- Journal / collection
- Advanced Electronic Materials
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/aelm.202500549
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Haneul Lee; Sujong Kim; Changhyeon Han; Haesung Kim; Hyojin Yang; Sejun Park; Sanghyuk Yun; Yoon Jung Lee; Sung‐Jin Choi; Dae Hwan Kim; Dong Myong Kim; Daewoong Kwon; Jong‐Ho Bae. Quantitative Analysis on the Interaction Between Channel Carrier and Remote Trap in Hf x Zr 1‐x O 2 /SiO 2 Interface in Ferroelectric Field‐Effect‐Transistor. Advanced Electronic Materials. 2025-12-16. https://doi.org/10.1002/aelm.202500549