Transport Mechanism of an E-Mode β-Ga 2 O 3 Schottky-NiO X Heterojunction Composite Field-Effect Transistor With a PFOM of 0.8 GW/cm 2
Xichen Wang; Yunlong He; Xiaoli Lu; Yu Shao; Peng Liu; Zhinan Zhang; Ying Zhou; Xuyang Zhang; Le Huang; Guran Chen; Xuefeng Zheng; Xiaohua Ma; Yue Hao
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Electron Devices
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/ted.2025.3634089
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Xichen Wang; Yunlong He; Xiaoli Lu; Yu Shao; Peng Liu; Zhinan Zhang; Ying Zhou; Xuyang Zhang; Le Huang; Guran Chen; Xuefeng Zheng; Xiaohua Ma; Yue Hao. Transport Mechanism of an E-Mode β-Ga 2 O 3 Schottky-NiO X Heterojunction Composite Field-Effect Transistor With a PFOM of 0.8 GW/cm 2. IEEE Transactions on Electron Devices. 2026-01. https://doi.org/10.1109/ted.2025.3634089