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Research literature / Conference paper

Hydrogenation-Immune Oxide Semiconductor FETs via Hetero-Integration-Compatible Hydrogen Evacuation Layer

J. Y. Fan; Z. D. Jiang; J. W. Liu; M. R. Liu; Y. H. Zhang; S. J. Yang; Z. H. Lv; X. Zheng; J. X. Li; Q. Li; K. C. Chang; X. W. Wang; Z. Y. Cai; S. D. Zhang; M. Zhang; Y. Yan; G. J. Li; L. Lu

Published
Publisher
IEEE
Journal / collection
2025 IEEE International Electron Devices Meeting (IEDM)
Research area
Semiconductors
Source type
Conference paper
DOI
10.1109/iedm50572.2025.11353868

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J. Y. Fan; Z. D. Jiang; J. W. Liu; M. R. Liu; Y. H. Zhang; S. J. Yang; Z. H. Lv; X. Zheng; J. X. Li; Q. Li; K. C. Chang; X. W. Wang; Z. Y. Cai; S. D. Zhang; M. Zhang; Y. Yan; G. J. Li; L. Lu. Hydrogenation-Immune Oxide Semiconductor FETs via Hetero-Integration-Compatible Hydrogen Evacuation Layer. 2025 IEEE International Electron Devices Meeting (IEDM). 2025-12-06. https://doi.org/10.1109/iedm50572.2025.11353868

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